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NBB-400
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz
RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic
Features
Reliable, Low-Cost HBT Design 15.5dB Gain, +15.0dBm P1dB@2GHz High P1dB of +14.6dBm@6.0GHz Single Power Supply Operation 50 I/O Matched for High Freq. Use
GND 4 MARKING - N4
RF IN 1
3 RF OUT
2 GND
Applications
Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Functional Block Diagram
Product Description
The NBB-400 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-400 provides flexibility and stability. The NBB-400 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-400-D) form, where its gold metallization is ideal for hybrid circuit designs.
Ordering Information
NBB-400Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz
NBB-400 NBB-400-T1 NBB-400-D NBB-400-E NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz Tape & Reel, 1000 Pieces NBB-400 Chip Form (100 pieces minimum order) Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer's Tool Kit
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Absolute Maximum Ratings Parameter
RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature
Rating
+20 300 70 200 -45 to +85 -65 to +150
Unit
dBm mW mA C C C
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Caution! ESD sensitive device.
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
15.5
Specification Typ.
16.7 16.5 16.0
Max.
Unit
dB dB dB dB dB
Condition
VD =+3.9V, ICC =47mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 8.0GHz f=0.1GHz to 5.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 12.0GHz
12.5 Gain Flatness, GF Input and Output VSWR
13.5 0.8 1.45:1 1.30:1 1.90:1
Bandwidth, BW Output Power @ -1dB Compression, P1dB
7.5 13.0 14.6 13.5
GHz dBm dBm dBm dB dBm dB 4.2 V dB/C
BW3 (3dB) f=2.0GHz f=6.0GHz f=9.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 12.0GHz
Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, GT/T 3.6
4.3 +28.1 -17.5 3.9 -0.0015
MTTF versus Temperature @ ICC =50mA
Case Temperature Junction Temperature MTTF 85 131 >1,000,000 251 C C hours C/W
Thermal Resistance
JC
J T - T CASE -------------------------- = JC ( C Watt ) V D I CC
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070327
NBB-400
Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
2 3
GND RF OUT
RF OUT
( V CC - V DEVICE ) R = -----------------------------------------I CC
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed.
RF IN
4
GND
Same as pin 2.
Package Drawing
45
0.055 (1.40)
UNITS: Inches (mm)
N4
0.040 (1.02) 0.070 (1.78)
0.020 0.200 sq. (5.08) 0.005 (0.13)
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC RCC
4 In 1 C block 2 3
L choke
(optional)
Out C block VDEVICE VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V) Bias Resistor, RCC () 5 22 8 81 10 122 12 162 15 222 20 322
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Rev A10 DS070327
NBB-400
Chip Outline Drawing - NBB-400-D
Chip Dimensions: 0.017" x 0.017" x 0.004"
UNITS: Inches (mm)
Back of chip is ground.
OUTPUT
INPUT
0.017 0.001 (0.44 0.03)
GND VIA
0.017 0.001 (0.44 0.03)
0.004 0.001 (0.10 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information * All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be negotiated on a case-by-case basis. * Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product Final Visual Inspection Criteria1. * Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allowable. Die Packaging * All die are packaged in GelPak ESD protective containers with the following specification: O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0). * GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2. Package Storage * Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability. * Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2. Die Handling * Proper ESD precautions must be taken when handling die material. * Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of tweezers. Do not touch die with any part of the body. * When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force may damage GaAs devices.
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Die Attach * The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the thermal path by which heat can leave the chip. * Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. * All connections should be made on the topside of the die. It is essential to performance that the backside be well grounded and that the length of topside interconnects be minimized. * Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out on the topside. Die Wire Bonding * Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. * All bond wires should be made as short as possible. Notes
1
RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die inspection personnel to determine final visual acceptance of die product prior to shipping to customers.
takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discretion of RFMD.
2RFMD
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070327
NBB-400
Extended Frequency InGaP Amplifier Designer's Tool Kit NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. * * * * 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Tape and Reel Dimensions
All Dimensions in Millimeters Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL Level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125C. If baking is required, devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033. Table 1 provides useful information for carrier tape and reels used for shipping the devices described in this document.
Table 1. Tape and Reel
RFMD Part Number NBB-400 Reel Diameter Inch (mm) 7 (178) Hub Diameter Inch (mm) 2.4 (61) Width (mm) 12 Pocket Pitch (mm) 8 Feed Single Units per Reel 1000
Notes: 1. All dimensions are in millimeters (mm). 2. Unless otherwise specified, all dimension tolerances per EIA-481. 3. 10 sprocket hole pitch cumulative tolerance .02. Ao = 5.8 .1 Bo = 6.1 .1 F = 5.50 .05 Ko = 2.0 .1 P = 8.0 .1 W = 12.0 .3
4.0 See Note 3 2.00.05 15 inch Trailer Top View
O1.5+.1 .0 1.75 15 inch Leader 0.30.05
Pin 1 Location
Sprocket holes toward rear of reel Bo 3.1.1 F W
1.3.1 1.3.1 3.1.1 Ao P Ko
Direction of Feed
Figure 1. Carrier Tape Drawing with Part Orientation
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Rev A10 DS070327
NBB-400
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
0.0 0.0 +25 C -5.0 -5.0 -10.0 -40 C +85 C
S12 versus Frequency, Over Temperature
-15.0
-10.0
S11 (dB)
-20.0
S12 (dB)
-15.0 +25 C -20.0 -40 C +85 C -25.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
-25.0
-30.0
-35.0
-40.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency, Over Temperature
25.0 +25 C -40 C +85 C 20.0 -5.0 0.0
S22 versus Frequency, Over Temperature
-10.0 15.0
S21 (dB)
S22 (dB)
10.0 5.0
-15.0
-20.0
-25.0
+25 C -40 C +85 C
0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
-30.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Frequency (GHz)
Frequency (GHz)
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Device Voltage versus Amplifier Current
4.00 20.0
P1dB versus Frequency
3.95 15.0
Device Voltage, V D (V)
3.90
3.85
P1dB (dBm)
10.0
3.80 5.0 3.75
3.70 35.00 40.00 45.00 50.00 55.00 60.00
0.0 1.0 3.0 5.0 7.0 9.0
Amplifier Current, ICC (mA)
Frequency (GHz)
POUT/Gain versus PIN at 2 GHz
20.0 20.0
POUT/Gain versus PIN at 6 GHz
15.0
15.0
POUT (dBm), Gain (dB)
10.0
POUT (dBm), Gain (dB)
POUT Gain
10.0
5.0
5.0
0.0
0.0 Pout Gain -5.0 -11.0 -9.0 -7.0 -5.0 -3.0 -1.0 1.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0
-5.0 -13.0
PIN (dBm)
PIN (dBm)
Third Order Intercept versus Frequency
50.0
40.0
Output IP3 (dBm)
30.0
20.0
10.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Frequency (GHz)
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070327
NBB-400
RoHS* Banned Material Content
RoHS Compliant: Package total weight in grams (g): Compliance Date Code: Bill of Materials Revision: Pb Free Category: Yes 0.019 0602 e3 Pa r ts Pe r Mi l l i o n (PPM ) Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 Hg 0 0 0 0 0 0 Cr VI 0 0 0 0 0 0 PB B 0 0 0 0 0 0 PB DE 0 0 0 0 0 0
B i l l o f Ma te r i a l s Di e Mo l di ng Co mp o und Le a d F r a me Di e Atta ch Ep o x y Wi r e So l de r Pl a ti ng
Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl udi ng a na l y ti ca l da ta , pr o vi de d to R F M D by i ts sup pl i e r s, a nd a p p l i e s to the B i l l o f Ma te r i a l s (B OM ) r e vi si o n no te d * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
Rev A10 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070327

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